Non-volatile memory and fabricating method thereof

ABSTRACT

A non-volatile memory having a tunneling dielectric layer, a floating gate, a control gate, an inter-gate dielectric layer and a first doping region and a second doping region is provided. The tunneling dielectric layer is disposed on a substrate. The floating gate is disposed on the tunneling dielectric layer, and has a protruding portion. The control gate is disposed over the floating gate to cover and surround the protruding portion. The protruding portion of the floating gate is fully covered and surrounded by the control gate in any direction, including extending directions of bit lines, word lines and an included angle formed between the word line and the bit line. The inter-gate dielectric layer is disposed between the floating gate and the control gate. The first doping region and the second doping region are respectively disposed in the substrate at two sides of the control gate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of Taiwan applicationserial no. 99145267, filed on Dec. 22, 2010. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to a semiconductor device and a fabricating methodthereof. More particularly, the invention relates to a non-volatilememory and a fabricating method thereof.

2. Description of Related Art

Non-volatile memory is a kind of memory having the advantages that itallows multiple data storing, reading or erasing operations. The datastored in the non-volatile memory will be retained even if the powerapplied to the device is cut off. The non-volatile memory has become awidely adopted memory device in personal computers and electronicequipments.

A typical non-volatile memory device is a stacked gate structureconstituted by a floating gate and a control gate manufactured by dopedpolysilicon. The floating gate is disposed between the control gate andthe substrate, and is floating instead of being connected to anycircuit. The control gate is connected to a word line. Besides, atunneling oxide layer is disposed between the substrate and the floatinggate while an inter-gate dielectric layer is disposed between thefloating gate and the control gate.

As the level of integration of the device increases currently, the sizeof the device is minimized based on the design rule. Generally, thelarger a gate coupling ratio (GCR) between the floating gate and thecontrol gate is, the lower the required working voltage for operationwill be. The methods of increasing the gate coupling ratio includeincreasing the capacitance of the inter-gate dielectric layer orreducing the capacitance of the tunneling oxide layer. The principlemethod for increasing the capacitance of the inter-gate dielectric layerincludes increasing the overlapped area between the control gate and thefloating gate. However, as the integration of the device becomes higher,it is difficult to increase the overlapped area between the control gateand the floating gate in the conventional stacked gate structure, andtherefore the issue of increasing the GCR and increasing the deviceintegration remains.

SUMMARY OF THE INVENTION

Accordingly, the invention provides a non-volatile memory and afabricating method thereof, so as to increase the overlapped areabetween the floating gate and the control gate, to enhance the GCR, toimprove device performance, and to significantly reduce the interferencebetween the floating gates.

The invention provides a non-volatile memory having a tunnelingdielectric layer, a floating gate, a control gate, an inter-gatedielectric layer and a first doping region and a second doping region.The tunneling dielectric layer is disposed on a substrate. The floatinggate is disposed on the tunneling dielectric layer, wherein the floatinggate has a protruding portion. The control gate is disposed above thefloating gate to cover and surround the protruding portion. Theprotruding portion of the floating gate is fully covered and surroundedby the control gate in any direction, such as an extending direction ofa bit line, an extending direction of a word line and an extendingdirection of an included angle formed between a word line and a bitline. The inter-gate dielectric layer is disposed between the floatinggate and the control gate. The first doping region and the second dopingregion are respectively disposed in the substrate at two sides of thecontrol gate.

According to an embodiment of the invention, the protruding portion isshaped as a hillock or a pyramid.

According to an embodiment of the invention, a material of theinter-gate dielectric layer includes silicon oxide/siliconnitride/silicon oxide.

According to an embodiment of the invention, a material of the floatinggate includes doped polysilicon.

According to an embodiment of the invention, a material of the controlgate includes doped polysilicon or polycide.

According to an embodiment of the invention, a material of the tunnelingdielectric layer includes silicon oxide.

In the non-volatile memory of the invention, the floating gate has theprotruding portion, and the control gate covers and surrounds theprotruding portion.

In addition, the protruding portion of the floating gate is fullycovered and surrounded by the control gate in any direction, such as anextending direction of a bit line, an extending direction of a word lineand an extending direction of an included angle formed between a wordline and a bit line. Therefore, the overlapped area between the floatinggate and the control gate is increased to enhance the GCR of the memory.Generally, the higher the gate coupling ratio is, the lower operationvoltage of the memory needs, thereby increasing the efficiency of thedevice. Furthermore, the protruding portion of the floating gate issurrounded by the control gate, so as to reduce the interference betweenthe adjacent floating gates.

The invention further provides a fabricating method of a non-volatilememory. The fabricating method includes following steps. A substrate isprovided, and a tunneling dielectric layer and a first conductive layerare sequentially formed on the substrate. A plurality of isolationstructures is formed in the first conductive layer, the tunnelingdielectric layer and the substrate. Then, the first conductive layer ispatterned to form a plurality of protruding portions. A portion of theisolation structures is removed, so that a top surface of each of theisolation structures is disposed between a top surface of the firstconductive layer and a surface of the substrate. An inter-gatedielectric layer is formed on the substrate, and a second conductivelayer is formed on the inter-gate dielectric layer. A patterning processis performed on the second conductive layer, the inter-gate dielectriclayer and the first conductive layer. Thus, the second conductive layeris patterned to form a plurality of control gates, and the firstconductive layer is patterned to form a plurality of floating gates. Theprotruding portion of each of the floating gates is fully covered andsurrounded by the control gate in any direction, such as an extendingdirection of a bit line, an extending direction of a word line and anextending direction of an included angle formed between a word line anda bit line.

According to an embodiment of the invention, the method further includesa step of removing a portion of the first conductive layer to increase adistance between the adjacent protruding portions, after the step ofpatterning the first conductive layer to form the protruding portions.

According to an embodiment of the invention, the step of removing theportion of the first conductive layer to increase the distance betweenthe adjacent protruding portions includes performing a wet etchingprocess or a dry etching process.

According to an embodiment of the invention, the step of removing theportion of the first conductive layer to increase the distance betweenthe adjacent protruding portions includes following steps. A portion ofthe first conductive layer is oxidized to form an oxidized layer. Then,the oxidized layer is removed.

According to an embodiment of the invention, the protruding portion isshaped as a hillock or a pyramid.

According to an embodiment of the invention, a material of theinter-gate dielectric layer includes silicon oxide/siliconnitride/silicon oxide.

According to an embodiment of the invention, a material of the floatinggates includes doped polysilicon.

According to an embodiment of the invention, a material of the controlgates includes doped polysilicon or polycide.

According to an embodiment of the invention, a material of the tunnelingdielectric layer includes silicon oxide.

In the fabricating method of a non-volatile memory of the invention, thefloating gate having the protruding portion is formed. The protrudingportion of the floating gate is fully covered and surrounded by thecontrol gate in any direction, such as an extending direction of a bitline, an extending direction of a word line and an extending directionof an included angle formed between a word line and a bit line. In otherwords, the protruding portion of the floating gate is covered andsurrounded by the control gate in all directions. Therefore, theoverlapped area between the floating gate and the control gate isincreased to enhance the GCR of the memory. Accordingly, the loweroperation voltage of the memory is required as the gate coupling ratiois increased, and thus the efficiency of the device is increased.

In the fabricating method of a non-volatile memory of the invention, themask used to form the conductive layer having the protruding portionsadapts the same mask for the subsequent formed control gates (wordlines), so that additional masks are not required and the manufacturingcost is reduced.

In order to make the aforementioned and other features and advantages ofthe invention more comprehensible, embodiments accompanying figures aredescribed in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1A shows a top view of a non-volatile memory according to anembodiment of the invention.

FIG. 1B is a cross-sectional view taken along a line A-A′ depicted inFIG. 1A.

FIG. 1C is a cross-sectional view taken along a line B-B′ depicted inFIG. 1A.

FIGS. 2A to 2E are schematic cross-sectional views taken along a lineA-A′ depicted in FIG. 1A and showing a fabricating method of anon-volatile memory according to an embodiment of the invention.

FIGS. 3A to 3E are schematic cross-sectional views taken along a lineB-B′ depicted in FIG. 1A and showing a fabricating method of anon-volatile memory according to an embodiment of the invention.

DESCRIPTION OF EMBODIMENTS

FIG. 1A shows a top view of a non-volatile memory according to anembodiment of the invention. FIG. 1B is a cross-sectional view takenalong a line A-A′ depicted in FIG. 1A. FIG. 1C is a cross-sectional viewtaken along a line B-B′ depicted in FIG. 1A. The line A-A′ is a cuttingline along the active region, and the line B-B′ is a cutting line alongthe word line.

Referring to FIGS. 1A to 1C, the non-volatile memory is disposed on asubstrate 100, for example. The non-volatile memory includes isolationstructures 102, control gates (word lines) 112, floating gates 108, atunneling dielectric layer 106, an inter-gate dielectric layer 110 and aplurality of doping regions 114 a, 114 b.

The isolation structures 102 are disposed in parallel in the substrate100 to define an active regions 104, for example. The isolationstructures 102 can extend in an X direction. The isolation structures102 can be shallow trench isolation structures.

The control gates (word lines) 112 are arranged on the substrate 100 inparallel and extend in a Y direction, for example. The Y directionintersects the X direction. A material of the control gates (word lines)112 is a conductive material, such as doped polysilicon andpolysilicide.

The floating gates 108 are disposed under the control gates 112 andlocated on the active region 104 between the adjacent two isolationstructures 102. Each of the floating gates 108 has a protruding portion108 a, and the protruding portion 108 a of the floating gate 108 isfully covered and surrounded by the control gate 112 in any direction,such as an extending direction of the line A-A′, an extending directionof the line B-B′ or an extending direction of an included angle formedbetween the line A-A′ and the line B-B′. In other words, the protrudingportion 108 a of the floating gate 108 is covered and surrounded by thecontrol gate 112 in all directions. The protruding portion 108 a can beshaped as a hillock or a pyramid. A material of the floating gates 108is a conductive material, such as doped polysilicon and polysilicide.

The tunneling dielectric layer 106 is disposed between each floatinggate 108 and the substrate 100, for example. A material of the tunnelingdielectric layer 106 is silicon oxide or other appropriate dielectricmaterials.

The inter-gate dielectric layer 110 is disposed between each controlgate 112 and each floating gate 108, for example. A material of theinter-gate dielectric layer 110 can be silicon oxide, silicon nitride ora composite dielectric layer, such as silicon oxide/siliconnitride/silicon oxide.

The doping regions 114 a, 114 b are disposed in the substrate 100 at twosides of the control gate 112, for example. The doping regions 114 a,114 b are P-type or N-type doping regions. In the present embodiment,the control gate 112 serves as the word line of the memory.

As shown in FIGS. 1A to 1C, in the non-volatile memory according to anembodiment of the invention, the floating gate 108 has the protrudingportion 108 a, and the protruding portion 108 a of the floating gate 108is fully covered and surrounded by the control gate 112 in anydirection, such as an extending direction of the line A-A′, an extendingdirection of the line B-B′ or an extending direction of an includedangle formed between the line A-A′ and the line B-B′. In other words,the protruding portion 108 a of the floating gate 108 is covered andsurrounded by the control gate 112 in all directions. Therefore, theoverlapped area between the floating gate 108 and the control gate 112,including the area of the four side walls and the area of the topportion of the protruding portion 108 a in the floating gate 108, isincreased to enhance the GCR of the memory. Accordingly, the loweroperation voltage of the memory is required as the gate coupling ratiois increased, and thus the efficiency of the device is increased. Inaddition, the protruding portion 108 a of the floating gate 108 isfurther covered and surrounded by the inter-gate dielectric layer 110.In the present embodiment, since the protruding portion 108 a of thefloating gate 108 is covered and surrounded by the control gate 112 inall directions, the coupling between the adjacent floating gates in anydirection, such as FGx coupling, FGy coupling or FGxy coupling in an Xdirection, a Y direction or an XY direction respectively, is reduced.

Herein, a fabricating method of a non-volatile memory according to anembodiment of the invention is described in the following. FIGS. 2A to2E are respectively schematic cross-sectional views taken along a lineA-A′ depicted in FIG. 1A. FIGS. 3A to 3E are respectively schematiccross-sectional views taken along a line B-B′ depicted in FIG. 1A. InFIGS. 2A to 2E and FIGS. 3A to 3E, components identical to the ones inFIGS. 1A to 1C are labeled identically.

Referring to FIGS. 2A and 3A, first, a substrate 100 is provided. Thesubstrate 100 is a silicon substrate, for example. A tunnelingdielectric layer 106 and a conductive layer 116 are sequentially formedon the substrate 100. A material of the tunneling dielectric layer 106is silicon oxide, for example. A method of forming the tunnelingdielectric layer 106 includes performing a thermal oxidation process. Amaterial of the conductive layer 116 is doped polysilicon. A method offorming the conductive layer 116 includes performing an ion implantationprocess after one undoped polysilicon layer (not shown) is formed by achemical vapor deposition (CVD) process, or the conductive layer 116 canbe formed by adopting the in-situ implanting operation in the CVDprocess. Thereafter, a plurality of isolation structures 102 is formedin the conductive layer 116, the tunneling dielectric layer 106 and thesubstrate 100, and the isolation structures 102 define an active region104.

The isolation structures 102 extend in an X direction, for example. Theisolation structures 102 can be shallow trench isolation (STI)structures, and a method of forming the isolation structures 102includes forming a mask layer (not shown) on the conductive layer 116and patterning the mask layer to form openings (not shown) which exposethe conductive layer 116. Then, by using the mask layer as a mask, theconductive layer 116, the tunneling dielectric layer 106 and thesubstrate 100 are etched to form a plurality of trenches (not shown) inthe conductive layer 116, the tunneling dielectric layer 106 and thesubstrate 100. Thereafter, the isolation structures 102 are formed byfilling an insulation material in the trenches. The insulation materialfilled in the trenches can be silicon oxide.

Referring to FIGS. 2B and 3B, a patterned mask layer 120 is formed onthe substrate 100. A material of the patterned mask layer 120 is, forexample, photoresist or silicon nitride. A method of forming thepatterned mask layer 120 includes following steps. First, a photoresistmaterial layer (not shown) is formed on the substrate 100. Then, anexposure process and a development process are performed on thephotoresist material layer to form the patterned mask layer 120. Inparticular, the mask used to form the patterned mask layer 120 can bethe same as the mask subsequently used to define the control gate (theword line).

Then, a portion of the conductive layer 116 is removed by using thepatterned mask layer 120 as a mask to form a plurality of protrudingportions 108 a. An opening 122 is formed between the adjacent protrudingportions 108 a. The opening 122 has a width W1. A surface of thetunneling dielectric layer 106 is not exposed by the openings 122. Inother words, the conductive layer 116 disposed at the bottom of theopenings 122 still maintains a predetermined thickness. A method ofremoving the portion of the dielectric layer 116 is a dry etchingprocess, for example.

After that, an oxidized layer 118 is formed over the conductive layer116 exposed by the openings 122. A method of forming the oxidized layer118 can be a thermal oxidation process.

Referring to FIGS. 2C and 3C, the patterned mask layer 120 is removed. Amethod of removing the patterned mask layer 120 includes performing awet photoresist removing method or a wet etching process, for example.

Then, the oxidized layer 118 and the isolation structures 102 arepartially removed to form the protruding portions 108 a. A method ofpartially removing the oxidized layer 118 and the isolation structures102 includes performing a dry etching process or a wet etching processby using a hydrofluoric acid as an etchant, for example. After removingthe portion of the oxidized layer 118, a width of each of the opening122 is increased to W2 from W1. In other words, removal of the portionof the oxidized layer 118 increases a distance between the adjacentprotruding portions 108 a. After removing the portion of the isolationstructures 102, a top surface of each of the isolation structures 102 isdisposed between a top surface of the conductive layer 116 and a surfaceof the substrate 100.

According to an embodiment of the invention, a method of removing theportion of the conductive layer 116 to increase the distance between theadjacent protruding portions 108 a includes following steps. After theopenings 122 are formed, the patterned mask layer 120 is removeddirectly. Then, a portion of the conductive layer 116 is removed, sothat a width of each of the openings 122 is increased to W2 from W1. Themethod of removing a portion of the conductive layer 116 includes anetching process, such as a dry etching process or a wet etching process.By adjusting the parameters in the dry etching process or the wetetching process, the shape of each of the protruding portions 108 a maybe sharper, or be a pyramid having an inclined sidewall or a hillock.

After that, an inter-gate dielectric layer 110 is formed on theconductive layer 116. A material of the inter-gate dielectric layer 110is silicon oxide/silicon nitride/silicon oxide, and a method of formingthe same includes forming a silicon oxide layer, a silicon nitride layerand a silicon oxide layer in sequence by using a CVD process or athermal oxidation process. Certainly, a material of the inter-gatedielectric layer 110 can also be silicon oxide, silicon nitride orsilicon oxide/silicon nitride or the similar materials, and a method offorming the same can include performing a CVD process by using differentreaction gas depending on the material thereof.

Referring to FIGS. 2D and 3D, a conductive layer 124 is formed on thesubstrate 100 to fill the openings 122. A material of the conductivelayer 124 is the suitable conductive material such as metal, silicide ordoped polysilicon. A method of forming the conductive layer 124 includesperforming a physical vapor deposition (PVD) process or a CVD processaccording to the material thereof, for example.

A patterned mask layer 126 is formed on the substrate 100. A material ofthe patterned mask layer 126 can be photoresist. A method of forming thepatterned mask layer 126 includes following steps. First, a photoresistmaterial layer is formed on the substrate 100. Then, an exposure processand a development process are performed on the photoresist materiallayer to form the patterned mask layer 126. In particular, the mask usedto form the patterned mask layer 126 can be the same as the masksubsequently used to define the control gate (the word line).

Referring to FIGS. 2E and 3E, by using the patterned mask layer 126 asthe mask, the conductive layer 124, the inter-gate dielectric layer 110and the conductive layer 116 are partially removed to form control gates112 and floating gates 108. Each of the floating gates 108 has aprotruding portion 108 a, and protruding portion 108 a of the floatinggate 108 is fully covered and surrounded by the control gate 112 in anydirection, such as an extending direction of the line A-A′, an extendingdirection of the line B-B′ or an extending direction of an includedangle formed between the line A-A′ and the line B-B′. In other words,the protruding portion 108 a of the floating gate 108 is covered andsurrounded by the control gate 112 in all directions.

After that, a plurality of doping regions 114 a, 114 b is formed in thesubstrate 100 at two sides of each of the control gates 112. A method offorming the doping regions 114 a, 114 b includes performing a dopantimplantation process with use of the control gates 112 as the mask. Thesubsequent process of forming the non-volatile memory is familiar tothose skilled in the art and is not described here.

In the fabricating method of a non-volatile memory of the invention, thefloating gate 108 having the protruding portion 108 a is formed. Theprotruding portion 108 a of the floating gate 108 is fully covered andsurrounded by the control gate 112 in any direction, such as anextending direction of the line A-A′, an extending direction of the lineB-B′ or an extending direction of an included angle formed between theline A-A′ and the line B-B′. In other words, the protruding portion 108a of the floating gate 108 is covered and surrounded by the control gate112 in all directions. Thus, the overlapped area between the floatinggate 108 and the control gate 112 is increased to enhance the GCR of thememory. Accordingly, the lower operation voltage of the memory isrequired as the gate coupling ratio is increased, and thus theefficiency of the device is increased. Furthermore, the protrudingportion 108 a of the floating gate 108 is covered and surrounded by thecontrol gate 112, so as to reduce the interference between the adjacentfloating gates 108 in any direction, such as an X direction, a Ydirection or an XY direction.

In the fabricating method of a non-volatile memory of the invention, themask used to form the conductive layer 116 having the protrudingportions 108 a adapts the same mask for the subsequent formed controlgates (word lines), so that additional masks are not required and themanufacturing cost is reduced.

In summary, in the non-volatile memory of the invention, the floatinggate has the protruding portion. The protruding portion of the floatinggate is fully covered and surrounded by the control gate in anydirection, such as an extending direction of a bit line, an extendingdirection of a word line and an extending direction of an included angleformed between a word line and a bit line. In other words, theprotruding portion of the floating gate is covered and surrounded by thecontrol gate in all directions. Therefore, the overlapped area betweenthe floating gate and the control gate is increased to enhance the GCRof the memory. Accordingly, the operation voltage of the memory is lowerand the efficiency of the device is increased. In addition, theprotruding portion of the floating gate is covered and surrounded by thecontrol gate, so as to reduce the interference between the adjacentfloating gates. Furthermore, additional cost for the mask or theequipment is not required in the fabricating method of a non-volatilememory of the invention.

Although the invention has been described with reference to the aboveembodiments, it will be apparent to one of the ordinary skill in the artthat modifications to the described embodiment may be made withoutdeparting from the spirit of the invention. Accordingly, the scope ofthe invention will be defined by the attached claims not by the abovedetailed descriptions.

What is claimed is:
 1. A non-volatile memory, comprising: a tunnelingdielectric layer, disposed on a substrate; a floating gate, disposed onthe tunneling dielectric layer, wherein the floating gate has aprotruding portion, and the protruding portion is shaped as a hillockand has an inclined sidewall; a control gate, disposed above thefloating gate to cover and surround the protruding portion in alldirections; an inter-gate dielectric layer, disposed between thefloating gate and the control gate; and a first doping region and asecond doping region, respectively disposed in the substrate at twosides of the control gate.
 2. The non-volatile memory as claimed inclaim 1, wherein a material of the inter-gate dielectric layer comprisessilicon oxide/silicon nitride/silicon oxide.
 3. The non-volatile memoryas claimed in claim 1, wherein a material of the floating gate comprisesdoped polysilicon.
 4. The non-volatile memory as claimed in claim 1,wherein a material of the control gate comprises doped polysilicon orpolycide.
 5. The non-volatile memory as claimed in claim 1, wherein amaterial of the tunneling dielectric layer comprises silicon oxide.